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Balandin image 2

Images from Balandin paper

Caption

Clockwise from top left: optical microscopy image of the high-power gallium nitride (GaN) heterostructure field-effect transistor (HFET); schematic of the graphene-graphite quilt on top of the transistor structure for spreading the heat from the local hot spot near the transistor drain; colored scanning electron microscopy image of the graphene quilt overlapping transistor; optical microscopy image of the graphene quilt on the device electrode illustrating its flexibility.