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6-29-16-UCR-Device Schem

A schematic of the integrated Tantalum Sulfide—Boron Nitride—Graphene Oscillator developed at UCR.

Caption

A schematic of the integrated Tantalum Sulfide—Boron Nitride—Graphene Oscillator developed at UCR, which is the first useful device that exploits the potential of charge-density waves to modulate an electrical current through a 2D material.

Description

A schematic of the integrated Tantalum Sulfide—Boron Nitride—Graphene Oscillator developed at UCR.